Effect Of Fringing Capacitances In Sub 100 Nm Mosfet's With High-K Gate Dielectrics
نویسندگان
چکیده
In this paper we look at the quantitative picture of fringing field efSects by use of high-k dielectrics on the 70 nm node CMOS technologies. By using Monte-Carlo based techniques, we extract the degradation in gate-to-channel capacitance and the internal, external fringing capacitance components for varying values of K. Our results clearly show the decrease in external fringing capacitance, increase in internal fringing capacitance and a slight decrease in overall capacitance, when the conventional Si02 is replaced by high-K dielectric. From the circuit point of view the lower total capacitance will increase the speed of the device, while the internal fringing capacitance will degrade the short-channel pe8ormance contributing to higher DIBL and drain leakage.
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